TAIWAN APPLIED CRYSTAL Co., Ltd to Present 8-Inch N-Type SiC Production Capabilities at ICSCRM 2025 in Busan
As global demand for high-power and high-efficiency materials continues to rise, TAIWAN APPLIED CRYSTAL CO., LTD (TAC) will participate in the upcoming International Conference on Silicon Carbide and Related Materials (ICSCRM), from September 14 to 19, 2025, at BEXCO (Busan Exhibition & Convention Center) in Busan, South Korea. TAC will focus on showcasing its core products, 8-inch N-Type Silicon Carbide (SiC) single crystals and optical-grade SiC materials, which is currently ramping production in 2025.
For many years, TAC has concentrated on research and development of SiC materials, while actively expanding production capacity to provide highly stable and competitive crystal materials. With self-developed crystal growth furnace equipment (PVT), TAC has full control over every critical process, from design to crystal growth, enhancing process stability, product consistency, and providing customers with reliable material solutions.
The showcased 8-inch N-Type SiC single crystal has demonstrated excellent results across key parameters, including yield, defect density, electrical properties, and optical properties. By leveraging precise crystal growth control techniques and continuously optimized process parameters, TAC has successfully reduced defect rates, improve cycle runs, and can offer a variety of specifications based on diverse application needs.
TAC is also actively advancing the development of 12-inch 4H N-Type SiC crystals, which is currently in the research and development phase, with sample expecting delivery in Q2 2026.
TAC is expanding other product lines to include semi-insulating Silicon Carbide (SI-SiC) and Gallium Oxide (Ga₂O₃) crystals, aiming to provide a broader range of material solutions for diverse applications. Although physical samples of these materials will not be presented at this event, we warmly invite interested industry partners to engage with us on-site for further discussions.
TAC boasts a strong R&D team with deep expertise, supported by self-developed equipment and a comprehensive SiC material development process, all aimed at collaborating with global partners to drive the commercialization and industrialization of wide-bandgap semiconductor materials.
We sincerely invite you to visit the TAC booth (Booth No. 109&110) during the exhibition to engage with our team in face-to-face discussions and explore potential collaboration and market opportunities.
We look forward to meeting you in Busan!