SiC 6" N-Type Dummy
Diameter | 149.5-150.0 mm |
---|---|
Polytype | 4H |
Thickness | 350 um ± 25 um |
Wafer Orientation | 4˚toward<11-20> ± 0.5˚ |
MP | ≤ 15/cm² |
Resistivity | 0.015-0.028 ohm.cm |
LTV | 5 um |
TTV | 15 um |
Bow | 40 um |
Warp | 60 um |
BPD | N/A |
TSD | N/A |
TED | N/A |
EPD | N/A |
Roughness (Polish/CMP) | Ra<1 nm/Ra<0.5 nm |
Si-face scratches (Cumulative length) | <150 mm |
Packaging | Multi-wafer cassette or single wafer container (vacuum, no air leakage & damage) |
SiC 8" N-Type Dummy
Diameter | 199.5-200.0 mm |
---|---|
Polytype | 4H |
Thickness | 500 um ± 25 um |
Wafer Orientation | 4˚toward<11-20> ± 0.5˚ |
MP | ≤ 15/cm² |
Resistivity | 0.015-0.028 ohm.cm |
LTV | 10 um |
TTV | 15 um |
Bow | 50 um |
Warp | 100 um |
BPD | N/A |
TSD | N/A |
TED | N/A |
EPD | N/A |
Roughness (Polish/CMP) | Ra<1 nm/Ra<0.5 nm |
Si-face scratches (Cumulative length) | <200 mm |
Packaging | Multi-wafer cassette or single wafer container (vacuum, no air leakage & damage) |
SiC 6" N-Type Prime
Diameter | 149.5-150.0 mm |
---|---|
Polytype | 4H |
Thickness | 350 um ± 25 um |
Wafer Orientation | 4˚toward<11-20> ± 0.5˚ |
MP | ≤ 0.2/cm² |
Resistivity | 0.015-0.024 ohm.cm |
LTV | 2.5 um |
TTV | 6 um |
Bow | 25 um |
Warp | 35 um |
BPD | < 2000 /cm2 |
TSD | < 100 /cm2 |
TED | < 3000 /cm2 |
EPD | < 5000 /cm2 |
Roughness (Polish/CMP) | Ra<1 nm/Ra<0.2 nm |
Si-face scratches (Cumulative length) | none |
Packaging | Multi-wafer cassette or single wafer container (vacuum, no air leakage & damage) |
SiC 8" N-Type Prime
Diameter | 199.5-200.0 mm |
---|---|
Polytype | 4H |
Thickness | 500 um ± 25 um |
Wafer Orientation | 4˚toward<11-20> ± 0.5˚ |
MP | ≤ 0.2/cm² |
Resistivity | 0.015-0.025 ohm.cm |
LTV | 5 um |
TTV | 10 um |
Bow | 35 um |
BPD | < 1000 /cm2 |
TSD | < 50 /cm2 |
TED | < 4000 /cm2 |
EPD | < 5000 /cm2 |
Warp | 70 um |
Roughness (Polish/CMP) | Ra<1 nm/Ra<0.2 nm |
Si-face scratches (Cumulative length) | none |
Packaging | Multi-wafer cassette or single wafer container (vacuum, no air leakage & damage) |
SiC 6" N-Type Epi (650V)
Substrate Specifications
Doping | n-type Nitrogen |
---|---|
Resistivity | 0.015-0.025 ohm.cm |
Diameter | 150.0±0.2 mm |
Surface Orientation | 4˚toward<11-20> ± 0.2˚ |
Primary Flat Orientation | <11-20> ± 5 ˚ |
Secondary Flat Orientation | None |
Primary Flat Length | 47.5 ± 1.5 mm |
Secondary Flat Length | None |
Surface Finish | Double Side Polish, Si Face CMP |
Thickness | 350 um ± 25 um |
Buffer Layer
Doping | n-type Nitrogen |
---|---|
Thickness | 0.5~1um |
Doping concentration | 1x1018 cm3 |
Epitaxy Layer
Doping | n-type Nitrogen |
---|---|
Thickness | 5 ± 10%um |
Thickness uniformity | ≤ 8% |
Doping concentration | 1x1016 ± 15% cm3 |
Doping uniformity | 6% σ/mean |
Total usable area | ≥95% (2mmx2mm) |
Killer defect density | 1/cm2 |
Post-epi Bow | ≤30 um |
Post-epi Warp | ≤45 um |
Post-epi TTV | ≤7 um |
Post-epi LTV | ≤3 (10mmx10mm) um |
Surface Roughness | Si-face Ra≤0.5 nm |
Metal Impurities | 1x1011 atoms/cm2 |
Scratch | Cumulative length ≤75 mm |
SiC 6" N-Type Epi (1200V)
Substrate Specifications
Doping | n-type Nitrogen |
---|---|
Resistivity | 0.015-0.025 ohm.cm |
Diameter | 150.0±0.2 mm |
Surface Orientation | 4˚toward<11-20> ± 0.2˚ |
Primary Flat Orientation | <11-20> ± 5 ˚ |
Secondary Flat Orientation | None |
Primary Flat Length | 47.5 ± 1.5 mm |
Secondary Flat Length | None |
Surface Finish | Double Side Polish, Si Face CMP |
Thickness | 350 um ± 25 um |
Buffer Layer
Doping | n-type Nitrogen |
---|---|
Thickness | 0.5~1um |
Doping concentration | 1x1018 cm3 |
Epitaxy Layer
Doping | n-type Nitrogen |
---|---|
Thickness | 11 ± 10%um |
Thickness uniformity | ≤ 8% |
Doping concentration | 7x1015 ± 15% cm3 |
Doping uniformity | 6% σ/mean |
Total usable area | ≥95% (2mmx2mm) |
Killer defect density | 1/cm2 |
Post-epi Bow | ≤30 um |
Post-epi Warp | ≤45 um |
Post-epi TTV | ≤7 um |
Post-epi LTV | ≤3 (10mmx10mm) um |
Surface Roughness | Si-face Ra≤0.5 nm |
Metal Impurities | 1x1011 atoms/cm2 |
Scratch | Cumulative length ≤75 mm |
SiC 6" N-Type Epi (1700V)
Substrate Specifications
Doping | n-type Nitrogen |
---|---|
Resistivity | 0.015-0.025 ohm.cm |
Diameter | 150.0±0.2 mm |
Surface Orientation | 4˚toward<11-20> ± 0.2˚ |
Primary Flat Orientation | <11-20> ± 5 ˚ |
Secondary Flat Orientation | None |
Primary Flat Length | 47.5 ± 1.5 mm |
Secondary Flat Length | None |
Surface Finish | Double Side Polish, Si Face CMP |
Thickness | 350 um ± 25 um |
Buffer Layer
Doping | n-type Nitrogen |
---|---|
Thickness | 0.5~1um |
Doping concentration | 1x1018 cm3 |
Epitaxy Layer
Doping | n-type Nitrogen |
---|---|
Thickness | 15 ± 10%um |
Thickness uniformity | ≤ 8% |
Doping concentration | 5x1015 ± 15% cm3 |
Doping uniformity | 6% σ/mean |
Total usable area | ≥94% (2mmx2mm) |
Killer defect density | 1/cm2 |
Post-epi Bow | ≤30 um |
Post-epi Warp | ≤45 um |
Post-epi TTV | ≤7 um |
Post-epi LTV | ≤3 (10mmx10mm) um |
Surface Roughness | Si-face Ra≤0.5 nm |
Metal Impurities | 1x1011 atoms/cm2 |
Scratch | Cumulative length ≤75 mm |