The Crystal Research Center at National Sun Yat-sen University (NSYSU) is the only laboratory in Taiwan capable of growing next-generation semiconductor silicon carbide (SiC). The center has successfully grown 6-inch SiC crystal boules, and starting in July this year, it has transferred this technology to Taiwan Applied Crystal Co., Ltd. and its affiliated group. The two parties have signed a five-year, NT$50 million technology transfer agreement, strengthening Taiwan's leadership in next-generation semiconductor materials.
Professor Ming-Chi Chou, Director of the Crystal Research Center and faculty member of the Department of Materials and Optoelectronic Science at NSYSU, noted that the research and development process involved collaboration with local enterprises such as China Steel and CSC Carbon. These partnerships have contributed to advancements in graphite insulation materials, crucibles, and crystal growth equipment, enhancing Taiwan’s MIT (Made in Taiwan) industrial capabilities. Starting in July, the university has transferred its technology to Taiwan Applied Crystal Co., Ltd. and its affiliated group, securing a five-year, NT$50 million deal that reinforces Taiwan’s competitive edge in semiconductor materials.
Silicon carbide (SiC), a third-generation (next-generation) semiconductor material, has been developed for decades and is known for its irreplaceable properties, including low power loss, high power handling, low noise, and excellent heat dissipation. However, the technology for growing SiC crystals remains highly challenging.
Professor Chou emphasized that third-generation semiconductor SiC crystals have diverse applications in electric vehicles, optoelectronics, and biomedical fields. The NSYSU team has achieved a breakthrough among Taiwan’s academic research institutions by successfully growing 6-inch conductive (n-type) 4H SiC single crystals. They continue to optimize crystal quality, growth speed, and stability.
During the research process, NSYSU collaborated with Taiwanese enterprises to drive innovation. The crystal growth equipment, including power supplies and computer-controlled systems, is 100% MIT. The crystal growth furnaces were developed by a company incubated at NSYSU’s Innovation and Incubation Center. Crucibles, which store raw SiC material, and graphite insulation materials were also supplied by local enterprises in Kaohsiung.
Professor Chou highlighted that manufacturers in Germany and Japan have been developing crucibles for decades. He expressed special gratitude to China Steel and CSC Carbon for their technical support. The proximity of these companies in Kaohsiung provided an advantage in improving insulation materials and thermal field design for the crucibles.
Starting in July, NSYSU has officially transferred its 6-inch SiC crystal growth technology to Taiwan Applied Crystal Co., Ltd. and its affiliated group under a five-year, NT$50 million agreement. The deal follows an exclusive buyout model with an annual NT$10 million payment, marking the group’s official entry into the next-generation semiconductor industry. Over the next five years, both parties will collaborate on the development of large-diameter conductive (n-type) and semi-insulating (SI-SiC) 4H and 6H SiC single crystals in 6-inch and 8-inch sizes.
Professor Chou stated that the collaborating company places great emphasis on research and development, talent cultivation, patents, and know-how. As a key upstream material supplier in the semiconductor industry, its existing production lines share similarities with SiC crystal growth. From July onward, the company’s engineers will attend NSYSU’s weekly technical meetings, and throughout the facility construction phase, both parties will continue working together to ensure a smooth technology transfer from the laboratory to the new production site.
In addition to advancements in third-generation semiconductor SiC crystals, NSYSU is simultaneously developing bulk gallium oxide (Ga₂O₃) crystals, a fourth-generation semiconductor material. Professor Chou noted that NSYSU’s Crystal Research Center currently operates two 6-inch crystal growth furnaces and plans to add one more 6-inch and two 8-inch furnaces in September.