
TAC and NCKU of Smart Semiconductor and Sustainable Manufacturing jointly exhibited at SEMICON Taiwan 2025 on September 10, showcasing outstanding R&D achievements in the silicon carbide (SiC) field.
TAC's exhibition featured its latest SiC ingot technology, including:
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8-inch N-type SiC ingots with an edge thickness of 20mm.
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6-inch N-type SiC ingots with an edge thickness of 40mm.
These exhibits demonstrate that TAC has successfully mastered and stabilized the growth parameters for 6-inch and 8-inch SiC ingots and has entered the trial production phase. Furthermore, TAC continues to advance its R&D of 12-inch SiC ingots, with plans to release technical progress updates in the second quarter of 2026.
TAC is committed to continuous innovation and breakthroughs in the SiC sector, collaborating with academia to strengthen the resilience and global competitiveness of Taiwan's semiconductor industry supply chain.
News: https://news-secr.ncku.edu.tw/p/404-1037-287215.phpNews: https://www.cna.com.tw/postwrite/chi/411918
News: https://udn.com/news/story/6928/8996545