The global semiconductor industry is facing a severe chip shortage, with the high manufacturing difficulty of third-generation semiconductor materials like silicon carbide (SiC) leading to supply shortages, especially in the automotive sector. National Sun Yat-sen University’s (NSYSU) Crystal Research Center is actively developing crystal growth equipment and related technologies. By utilizing ultra-high temperatures exceeding 2200°C, the center successfully grows SiC crystals, making it the only university research center in Taiwan equipped for 6- to 8-inch wafer production. Through MIT (Made in Taiwan) high-quality crystal research, NSYSU is helping to advance Taiwan’s semiconductor industry.
Professor Ming-Chi Chou, Chair Professor of the Department of Materials and Optoelectronic Science and Director of the Crystal Research Center, stated that while Taiwan leads the global semiconductor foundry industry, its development in emerging technologies like 5G and electric vehicles has been constrained by the lack of third-generation semiconductor materials, particularly SiC and gallium nitride (GaN) crystals. Very few domestic companies engage in SiC and GaN crystal production due to the high technical barriers, which require significant time and expertise. Many companies struggle with low crystal yield rates because their crystal growth equipment and thermal field designs are not independently developed.
Chou highlighted that with support from Taiwan’s Ministry of Science and Technology (TCECM) and funding from the Ministry of Education’s Higher Education Sprout Project, NSYSU’s Crystal Research Center has overcome technological challenges and now possesses the capability to grow SiC crystals. The key to their success lies in the research team’s in-house design and development of both the crystal growth furnace and the growth technology itself, ensuring full independence from foreign suppliers.
According to Chou, the development of next-generation semiconductor materials will determine Taiwan’s ability to seize future semiconductor opportunities, impacting global economic, political, and defense strategies. The Crystal Research Center is collaborating with two major publicly traded companies to develop high-purity SiC powder, crucibles, and thermal insulation materials as upstream raw materials. Meanwhile, the center is responsible for developing SiC crystal growth technology and equipment, while NSYSU’s technology transfer partner will handle SiC crystal growth, cutting, and polishing. These three parties aim to establish a dedicated SiC crystal growth company.
Additionally, NSYSU will integrate this research with its existing International College of Materials Science, incorporating compound semiconductor raw material synthesis and crystal growth into its curriculum. This initiative will cultivate semiconductor talent in southern Taiwan, further strengthening Taiwan’s position in third-generation semiconductor materials.