Silicon carbide (SiC), a third-generation semiconductor material, is regarded as a strategic resource essential for the development of electric vehicles, 6G communications, national defense, aerospace, and green energy. The Crystal Research Center at National Sun Yat-sen University (NSYSU) has become the first academic institution in Taiwan to successfully grow 6-inch conductive (n-type) 4H SiC single crystals. All critical technologies, equipment design, and assembly are MIT (Made in Taiwan), eliminating dependence on foreign manufacturers. The crystals feature faster and more repeatable growth, and the technology transfer will help upgrade Taiwan’s industry and enhance market competitiveness.
Professor Ming-Chi Chou, Director of International Affairs and faculty member of the Department of Materials and Optoelectronic Science at NSYSU, pointed out that while Taiwan leads the global semiconductor industry, its advancement in high-power components, electric vehicles, and low-orbit satellites is limited by the lack of mature silicon carbide crystal growth technology.
Chou stated that the NSYSU team has achieved a key breakthrough in SiC crystal growth and plans to transfer this technology to strengthen Taiwan’s semiconductor supply chain with high-level strategic know-how. The first phase of the transfer will be to long-term industry partners, utilizing research achievements to boost industrial upgrades.
Silicon carbide excels in high-voltage and high-power applications due to its superior heat dissipation, but its production is highly challenging, requiring extensive time and experience. Chou revealed that NSYSU has successfully grown 6-inch conductive n-type 4H SiC single crystals, with a central thickness of 19mm and an edge thickness of approximately 14mm. The growth rate has reached 370μm per hour, a feat unmatched by any other research institution or university in Taiwan, marking significant progress in third-generation semiconductor technology.
Chou emphasized that all key technologies and equipment—such as crystal growth furnaces, crucibles for material storage, thermal field design, growth parameters, and crystal defect inspection—are entirely developed and assembled domestically. This independence from foreign manufacturers establishes a fully integrated supply chain ecosystem, linking academic research with industrial manufacturing while reducing R&D and production costs.
Currently, 4-inch and 6-inch SiC wafers dominate the market, with an ongoing transition toward 8-inch. Looking ahead, Chou noted that the NSYSU team is actively developing 8-inch conductive (n-type) 4H SiC crystal growth equipment. This year, the team will continue advancing core SiC growth technology while also developing a high-vacuum environment for semi-insulating SiC (SI-SiC), securing Taiwan’s independent capabilities in materials, processes, and equipment.
Regarding Tesla’s recent announcement of reducing its use of SiC chips, Chou clarified that Tesla’s statement specifies that high-temperature components will continue to use SiC, while low-temperature components will use silicon, with the two being separately packaged. He emphasized that each material’s unique properties require years of verification, and replacing existing materials involves multiple considerations. As a result, SiC remains an essential material, with strong demand from electric vehicles and charging stations.