Taiwan Applied Crystal Co., Ltd. (TAC) announced its participation in the International Conference on Silicon Carbide and Related Materials (ICSCRM 2026), to be held in Yokohama, Japan. As one of the world's most authoritative academic and industry exchange platforms in the field of silicon carbide, TAC will showcase to leading international experts and industry pioneers its major breakthrough in 12-inch single-crystal silicon carbide development, along with the mass production progress of its new 8-inch ultra-low resistance (Ohmic-ULR) product.
The two core products featured at this exhibition demonstrate TAC's solid R&D capabilities and fully self-developed manufacturing strength:
- 12-Inch N-Type Single-Crystal Silicon Carbide (Advanced Packaging Heat Dissipation for AI): Developed 100% in-house by TAC's team between December 2025 and April 2026, this technology has achieved an effective crystal thickness of over 16mm and high yield in the laser slicing process. Leveraging silicon carbide's superior thermal conductivity, this breakthrough gives TAC the core technical capability to enter the AI chip heat dissipation supply chain.
- 8-Inch Ultra-Low Resistance Wafer (Ohmic-ULR): With resistivity reduced to as low as 5 mΩ·cm, this product significantly lowers conduction losses and improves device efficiency. It is purpose-built for next-generation grid and EV fast-charging applications, including 800V high-voltage direct current (HVDC) and solid-state transformers (SST).
Looking ahead, TAC will provide highly competitive advanced material solutions for the global high-frequency and high-power markets. We sincerely invite experts and partners from various sectors to visit TAC's booth (Hall A, 1F, B7) during the exhibition (September 27 – October 2) for in-depth technical exchange and business discussions with our team, as we work together to build a resilient next-generation semiconductor supply chain.
